High-quality PbZr0.52Ti0.48O3 films prepared by modified sol-gel route at low temperature

被引：31

作者：

Perez, J ^{[1
]}

Vilarinho, PM ^{[1
]}

Kholkin, AL ^{[1
]}

机构：

[1] Univ Aveiro, CICECO, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

来源：

THIN SOLID FILMS | 2004年 / 449卷 / 1-2期

关键词：

crystallization; dielectric properties; growth mechanism;

D O I：

10.1016/j.tsf.2003.10.104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 degreesC possess a dielectric permittivity of similar to 1900, a remanent polarization of similar to 30 muC/cm(2) and a coercive field of similar to 60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：20 / 24

页数：5

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