Process integration for nonvolatile ferroelectric: Memory fabrication

被引：43

作者：

Jones, RE

Desu, SB

机构：

来源：

MRS BULLETIN | 1996年 / 21卷 / 06期

关键词：

D O I：

10.1557/S0883769400046091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：55 / 58

页数：4

共 25 条

[1] PHASE EVOLUTION AND ANNEALING EFFECTS ON THE ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILMS WITH RUO2 ELECTRODES [J].

ALSHAREEF, HN ;

BELLUR, KR ;

AUCIELLO, O ;

KINGON, AI .

THIN SOLID FILMS, 1995, 256 (1-2) :73-79

[2]

ALSHAREEF HN, 1995, MATER RES SOC S P, P229

[3]

CHUNG I, 1995, MATER RES SOC SYMP P, V361, P249

[4] FERROELECTRICS FOR NONVOLATILE MEMORIES [J].

CUPPENS, R ;

LARSEN, PK ;

SPIERINGS, GACM .

MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) :245-252

[5]

DEEPE HR, 1977, SOLID STATE ELECT, V20, P51

[6]

EOM CB, 1993, MATER RES SOC S P, V310, P145

[7] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL [J].

EVANS, JT ;

WOMACK, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) :1171-1175

[8] ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J].

FLAMM, DL ;

COWAN, PL ;

GOLOVCHENKO, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1341-1347

[9] Ferroelectric non-volatile memories for low-voltage, low-power applications [J].

Jones, RE ;

Maniar, PD ;

Moazzami, R ;

Zurcher, P ;

Witowski, JZ ;

Lii, YT ;

Chu, P ;

Gillespie, SJ .

THIN SOLID FILMS, 1995, 270 (1-2) :584-588

[10]

LEE J, 1995, MATER RES SOC SYMP P, V361, P67, DOI 10.1557/PROC-361-67

← 1 2 3 →