Plasma-surface interactions of model polymers for advanced photoresists using C4F8/Ar discharges and energetic ion beams

被引:69
作者
Engelmann, S.
Bruce, R. L.
Kwon, T.
Phaneuf, R.
Oehrlein, G. S. [1 ]
Bae, Y. C.
Andes, C.
Graves, D.
Nest, D.
Hudson, E. A.
Lazzeri, P.
Lacob, E.
Anderle, M.
机构
[1] Univ Maryland, Inst Res Elect & Appl Phys, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[2] Rohm & Haas Elect Mat, Marlborough, MA 01752 USA
[3] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA
[4] Lam Res Corp, Fremont, CA 94538 USA
[5] ITC Irst, Ctr Sci & Technol Res, I-38050 Trento, Italy
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 04期
基金
美国国家科学基金会;
关键词
D O I
10.1116/1.2759935
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Plasma based transfer of photoresist (PR) patterns into underlying films and substrates is basic to micro- and nanofabrication but can suffer from excessive surface and line edge roughness in the photoresist and resulting features. The authors have studied the interaction of a set of adamantyl methacrylate-based model polymers with fluorocarbon/Ar discharges and energetic Ar+ ion beams. Through systematic variation of the polymer structure, the authors were able to clarify the contributions of several critical polymer components on the chemical and morphological modifications in the plasma environment. Etching rates and surface chemical and morphological changes for the model polymers and fully formulated 193 and 248 nm photoresists were determined by ellipsometry, atomic force microscopy, time of flight static secondary ion mass spectrometry, and x-ray photoelectron spectroscopy. The polymer structure in the near surface region (similar to 10 nm) of all materials is destroyed within the first seconds of exposure to a fluorocarbon/Ar plasma. The plasma-induced changes include destruction of polymeric structure in the near surface region and oxygen and hydrogen loss along with fluorination. For the 193 nm PR material, the initial densification of the near surface region was followed by the introduction of pronounced surface roughness. This change was not seen for 248 nm PR processed under identical conditions. When comparing the responses of different polymer materials, the authors observed a strong dependence of plasma-induced surface chemical and morphological changes on polymer structure. In particular, the adamantane group of 193 nm PR showed poor stability under plasma exposure. On the other hand, the plasma-induced changes for polymer resins with or without the low molecular weight chemicals required to make the photoresist system photoactive did not differ significantly. The behavior of the same materials during energetic argon ion beam bombardment was also investigated. No significant differences in etch yield and surface roughness evolution for the different materials were seen in that case. (c) 2007 American Vacuum Society.
引用
收藏
页码:1353 / 1364
页数:12
相关论文
共 47 条
[1]  
[Anonymous], INT TECHNOLOGY ROADM
[2]  
BAE YJ, UNPUB
[3]   XPS characterisation of plasma-treated and alumina-coated PMMA [J].
Ben Amor, S ;
Baud, G ;
Jacquet, M ;
Nansé, G ;
Fioux, P ;
Nardin, M .
APPLIED SURFACE SCIENCE, 2000, 153 (2-3) :172-183
[4]  
Biedermann H., 2004, PLASMA POLYM FILMS
[5]  
DAWES W, 1996, PHYS PROPERTIES POLY, pCH41
[6]   Using a quartz crystal microbalance for low energy ion beam etching studies [J].
Doemling, MF ;
Lin, B ;
Rueger, NR ;
Oehrlein, GS ;
Haring, RA ;
Lee, YH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (01) :232-236
[7]   Etching of low-k materials in high density fluorocarbon plasma [J].
Eon, D ;
Raballand, V ;
Cartry, G ;
Peignon-Fernandez, MC ;
Cardinaud, C .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 28 (03) :331-337
[8]   Polymer photochemistry at advanced optical wavelengths [J].
Fedynyshyn, TH ;
Kunz, RR ;
Sinta, RF ;
Goodman, RB ;
Doran, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3332-3339
[9]   Ion irradiation effects on hardness and elastic modulus in AZ 1350Jphotoresist film [J].
Foerster, CE ;
Garcia, ITS ;
Zawislak, FC ;
Serbena, FC ;
Lepienski, CM ;
Schreiner, WH ;
Abbate, M .
THIN SOLID FILMS, 2002, 411 (02) :256-261
[10]   DRY ETCH RESISTANCE OF ORGANIC MATERIALS [J].
GOKAN, H ;
ESHO, S ;
OHNISHI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) :143-146