Origin of giant bulk Rashba splitting: Application to BiTeI

被引:193
作者
Bahramy, M. S. [1 ]
Arita, R. [1 ,2 ]
Nagaosa, N. [1 ,2 ]
机构
[1] RIKEN Adv Sci Inst, CERG, Wako, Saitama 3510198, Japan
[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 04期
基金
日本学术振兴会;
关键词
LOCALIZED WANNIER FUNCTIONS; BAND-STRUCTURE; SPIN; SEMICONDUCTORS; PLANE;
D O I
10.1103/PhysRevB.84.041202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We theoretically propose the necessary conditions for realization of giant Rashba splitting in bulk systems. In addition to (i) the large atomic spin-orbit interaction in an inversion-asymmetric system, the following two conditions are further required; (ii) a narrow band gap, and (iii) the presence of top valence and bottom conduction bands of symmetrically the same character. As a representative example, using the first principles calculations, the recently discovered giant bulk Rashba splitting system BiTeI is shown to fully fulfill all these three conditions. Of particular importance, by predicting the correct crystal structure of BiTeI, different from what has been believed thus far, the third criterion is demonstrated to be met by a negative crystal field splitting of the top valence bands.
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页数:4
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