Symmetry and spin dephasing in (110)-grown quantum wells

被引：59

作者：

Bel'kov, V. V. ^{[1
,2
]}

Olbrich, P. ^{[1
]}

Tarasenko, S. A. ^{[2
]}

Schuh, D. ^{[1
]}

Wegscheider, W. ^{[1
]}

Korn, T. ^{[1
]}

Schueller, C. ^{[1
]}

Weiss, D. ^{[1
]}

Prettl, W. ^{[1
]}

Ganichev, S. D. ^{[1
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.100.176806

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer positions.

引用

页数：4

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