InAs/InP quantum dots in SiO2/Ta2O5-based microcavities

被引：5

作者：

Dalacu, D ^{[1
]}

Poitras, D ^{[1
]}

Lefebvre, J ^{[1
]}

Poole, PJ ^{[1
]}

Aers, GC ^{[1
]}

Williams, RL ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1588369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar InAs/InP quantum-dot microcavities using multilayer SiO2/Ta2O5 Bragg reflectors have been studied in emission. For an eight-pair mirror design, the stop band extends from 700 to 900 meV and the cavity linewidth is similar to500 mueV for emission at 850 meV. Measurements as a function of incident power show quantum-dot saturation behavior, with the emission intensity going to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in reasonable agreement with theory. (C) 2003 American Institute of Physics.

引用

页码：4803 / 4805

页数：3

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