Optically pumped InAs quantum dot microdisk lasers

被引:141
作者
Cao, H [1 ]
Xu, JY
Xiang, WH
Ma, Y
Chang, SH
Ho, ST
Solomon, GS
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.126693
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have achieved lasing in InAs quantum dot embedded GaAs microdisks under optical pumping. Above the lasing threshold, a drastic increase of emission intensity is accompanied by a decrease of the spectral linewidth of the whispering gallery modes. The laser light is linearly polarized. The polarization direction is parallel to the disk plane. The wide gain spectrum of quantum dots allows simultaneous lasing in several whispering gallery modes of a microdisk. (C) 2000 American Institute of Physics. [S0003-6951(00)02824-2].
引用
收藏
页码:3519 / 3521
页数:3
相关论文
共 18 条
[1]   Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 mu m [J].
Baba, T ;
Fujita, M ;
Sakai, A ;
Kihara, M ;
Watanabe, R .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) :878-880
[2]   Red-emitting semiconductor quantum dot lasers [J].
Fafard, S ;
Hinzer, K ;
Raymond, S ;
Dion, M ;
McCaffrey, J ;
Feng, Y ;
Charbonneau, S .
SCIENCE, 1996, 274 (5291) :1350-1353
[3]   High-Q wet-etched GaAs microdisks containing InAs quantum boxes [J].
Gayral, B ;
Gérard, JM ;
Lemaitre, A ;
Dupuis, C ;
Manin, L ;
Pelouard, JL .
APPLIED PHYSICS LETTERS, 1999, 75 (13) :1908-1910
[4]   Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity [J].
Gerard, JM ;
Sermage, B ;
Gayral, B ;
Legrand, B ;
Costard, E ;
Thierry-Mieg, V .
PHYSICAL REVIEW LETTERS, 1998, 81 (05) :1110-1113
[5]   Spontaneous lifetime control in a native-oxide-apertured microcavity [J].
Graham, LA ;
Huffaker, DL ;
Deppe, DG .
APPLIED PHYSICS LETTERS, 1999, 74 (17) :2408-2410
[6]   ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].
GRUNDMANN, M ;
CHRISTEN, J ;
LEDENTSOV, NN ;
BOHRER, J ;
BIMBERG, D ;
RUVIMOV, SS ;
WERNER, P ;
RICHTER, U ;
GOSELE, U ;
HEYDENREICH, J ;
USTINOV, VM ;
EGOROV, AY ;
ZHUKOV, AE ;
KOPEV, PS ;
ALFEROV, ZI .
PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046
[7]   Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture [J].
Huffaker, DL ;
Baklenov, O ;
Graham, LA ;
Streetman, BG ;
Deppe, DG .
APPLIED PHYSICS LETTERS, 1997, 70 (18) :2356-2358
[8]   Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].
Kamath, K ;
Bhattacharya, P ;
Sosnowski, T ;
Norris, T ;
Phillips, J .
ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375
[9]  
KIRKSTAEDTER N, 1994, ELECTRON LETT, V30, P1416
[10]   ROOM-TEMPERATURE OPERATION OF SUBMICROMETER RADIUS DISK LASER [J].
LEVI, AFJ ;
MCCALL, SL ;
PEARTON, SJ ;
LOGAN, RA .
ELECTRONICS LETTERS, 1993, 29 (18) :1666-1668