Theoretical modeling of dark current and photo-response for quantum well and quantum dot infrared detectors

被引:26
作者
Kuo, DMT [1 ]
Fang, AB [1 ]
Chang, YC [1 ]
机构
[1] Univ Illinois, Dept Phys, Mat Res Lab, Urbana, IL 61801 USA
关键词
quantum wells; quantum dots; dark current; photo-response; infrared detectors;
D O I
10.1016/S1350-4495(01)00103-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Dark currents (due to direct tunneling process) and photo-response for both quantum well (QW) and quantum dot (QD) systems are calculated. A stabilization method (SM) is used to study the dynamic behavior and photo-response of an electron in an isolated QW, coupled QW or QD (with conical shape) under uniform electric field. A stabilization graph is obtained by plotting the eigenvalues of a QW or QD embedded in a confining box made of barrier material as functions of the size of the box. The eigenvalues of the system are calculated within the effective mass approximation via the Rayleigh-Ritz variational method. Density of states (DOSs) and time-dependent wave functions associated with the quasi-bound state are constructed via the SM. It is shown that the DOSs have a Lorentzian profile and the width of the Lorentzian profile gives the tunneling rate. The photo-response for QWs and conical QDs are studied and implications for device applications are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:433 / 442
页数:10
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