In situ characterization of atomic layer deposition of SrTiO3

被引:23
作者
Rahtu, A [1 ]
Hänninen, T [1 ]
Ritala, M [1 ]
机构
[1] Univ Helsinki, Dept Chem, Helsinki 00014, Finland
来源
JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期
关键词
D O I
10.1051/jp4:20013115
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The reaction mechanisms in the atomic layer deposition of SrO and SrTiO3 Were studied with a quartz crystal microbalance and a quadrupole mass spectrometer at 325 degreesC. The precursors were Sr((C5Pr3H2)-Pr-i)(2), Ti(OCH(CH3)(2))(4) and deuterated water. The main gaseous byproduct was (C5Pr3H2D)-Pr-i. When SrO was grown on TiO2, the TiO2 surface affected the growth until it became covered with SrO. By contrast, the SrO surface did not have as significant effect to the growth of TiO2.
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页码:923 / 930
页数:8
相关论文
共 27 条
[1]   Control of thin film structure by reactant pressure in atomic layer deposition of TiO2 [J].
Aarik, J ;
Aidla, A ;
Sammelselg, V ;
Siimon, H ;
Uustare, T .
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (03) :496-502
[2]   Titanium isopropoxide as a precursor for atomic layer deposition:: characterization of titanium dioxide growth process [J].
Aarik, J ;
Aidla, A ;
Uustare, T ;
Ritala, M ;
Leskelä, M .
APPLIED SURFACE SCIENCE, 2000, 161 (3-4) :385-395
[3]   Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water [J].
Aarik, J ;
Aidla, A ;
Sammelselg, V ;
Uustare, T ;
Ritala, M ;
Leskelä, M .
THIN SOLID FILMS, 2000, 370 (1-2) :163-172
[4]   ENCAPSULATED ALKALINE-EARTH METALLOCENES .2. TRIISOPROPYLCYCLOPENTADIENYL SYSTEMS, [(C3H7)3C5H2]2AE(THF)N (AE = CA, SR, BA - N = 0-2), AND THE CRYSTAL-STRUCTURE OF [(C3H7)3C5H2]2BA(THF)2 [J].
BURKEY, DJ ;
WILLIAMS, RA ;
HANUSA, TP .
ORGANOMETALLICS, 1993, 12 (04) :1331-1337
[5]  
DORING H, 1992, BER BUNSEN PHYS CHEM, V96, P620
[6]   (Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory.: A review on the process integration [J].
Hwang, CS .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (2-3) :178-190
[7]  
*JCPDS, 211272 JCPDS
[8]   High-permittivity perovskite thin films for dynamic random-access memories [J].
Kingon, AI ;
Streiffer, SK ;
Basceri, C ;
Summerfelt, SR .
MRS BULLETIN, 1996, 21 (07) :46-52
[9]  
Kukli K, 2000, CHEM VAPOR DEPOS, V6, P303, DOI 10.1002/1521-3862(200011)6:6<303::AID-CVDE303>3.3.CO
[10]  
2-A