Low-voltage polymer field-effect transistors for nonvolatile memories

被引：181

作者：

Naber, RCG

de Boer, B

Blom, PWM

de Leeuw, DM

机构：

[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands

[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 20期

关键词：

D O I：

10.1063/1.2132062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate organic nonvolatile memories based on transistors, made from spin-coated polymers, that have programming voltages of 15 V and good data retention capabilities. The low-voltage programmable ferroelectric field-effect transistors were obtained by an optimized ferroelectric polymer deposition method using cyclohexanone as a solvent from which films can be obtained that are thin, smooth and defect free. The data retention characteristics were measured for 3 h under constant read conditions. Extrapolation predicts that the data retention capability exceeds 10 years. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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