Highly c-axis oriented LiNb0.5Ta0.5O3 thin films on Si substrates fabricated by thermal plasma spray CVD

被引:7
作者
Kulinich, SA
Shibata, J
Yamamoto, H
Shimada, Y
Terashima, K
Yoshida, T
机构
[1] Univ Tokyo, Fac Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Sch Engn, Engn Res Inst, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan
基金
日本学术振兴会;
关键词
LiNb0.5Ta0.5O3; thin films; thermal plasma spray CVD; X-ray diffraction;
D O I
10.1016/S0169-4332(01)00523-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lithium niobate-tantalate films with the composition LiNb0.5Ta0.5O3 and very high c-axis orientation were grown on (1 0 0) and (1 1 1) Si substrates by using the thermal plasma spray CVD method. It is demonstrated that the substrate temperature is the key factor governing film orientation and crystallinity. The film direction could be varied from (0 0 6) to (0 1 2) by controlling the deposition temperature. Under optimal growth conditions, 97% c-textured films could be grown on both thick and very thin intermediate SiO2 layers. A (0 0 6) rocking-curve full-width at half-maximum value could achieve 3.7, by using the optimal deposition temperature. The growth rate applied was equal to 160-340 nm/min. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:150 / 158
页数:9
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