Vertical type organic light emitting device using thin-film ZnO electrode

被引：13

作者：

Iechi, H

Sakai, M

Nakamura, K

Iizuka, M

Nakamura, M

Kudo, K

机构：

[1] Ricoh Co Ltd, Tsuzuki Ku, Yokohama, Kanagawa 2240035, Japan

[2] Chiba Univ, Inage Ku, Chiba 2638522, Japan

[3] Optoelect Ind Tech Dev Assoc, Bunkyo Ku, Tokyo 1120014, Japan

[4] Pioneer Co Ltd, Tsurugashima, Saitama 3502288, Japan

来源：

SYNTHETIC METALS | 2005年 / 154卷 / 1-3期

关键词：

organic semiconductors based on conjugated molecules; light sources; switches; sputtering; evaporation and sublimation; X-ray emission; diffraction and scattering;

D O I：

10.1016/j.synthmet.2005.07.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a new type organic light emitting transistor (OLET) combining static induction transistor (SIT) with double hetero junction type organic light emitting diodes (OLED) using n-type zinc oxide (ZnO) films which works as a transparent and electron injection layer. The device characteristics of newly developed OLED and ZnO-SIT showed relatively high luminance of about 500 cd/m(2) at 7 6 mA/cm(2) and is able to control by gate voltage as low as I V, respectively. The crystal structure of the ZnO films as a function of Ar/O-2 flow ratio and the basic characteristics of the OLET depending on the ZnO sputtering conditions are investigated. The results obtained here show that the OLET with using ZnO film is a suitable element for flexible sheet displays.

引用

页码：149 / 152

页数：4

共 11 条

[1] Very high-efficiency green organic light-emitting devices based on electrophosphorescence [J].