Low dielectric constant fluorinated oxide films prepared by remote plasma chemical vapor deposition

被引：13

作者：

Lee, SM ^{[1
]}

Park, M ^{[1
]}

Park, KC ^{[1
]}

Bark, JT ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] ELECTR & TELECOMMUN RES INST,SEMICOND DIV,TAEJON 305350,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

SiF4; SiOF; SiO2; dielectric constant; XPS; RPCVD;

D O I：

10.1143/JJAP.35.1579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF4/SiH4/O-2 mixtures by remote plasma chemical vapor deposition (RPCVD). The refractive index and relative dielectric constant decrease with increasing SiF4/SiH4 ratio. The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy increases with SiF4/SiH4 ratio. With increase of fluorine content in the SiOF film, the peak position of the Si-O stretching mode shifts to a higher wave number and the relative dielectric constant decreases. The SiOF film, deposited with SiF4/SiH4 mixture ([SiF4]/[SiH4]=40), exhibited an F content of 12 at.% and a relative dielectric constant of 3.38.

引用

页码：1579 / 1582

页数：4

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