Activation characteristics of ion-implanted Si+ in AlGaN -: art. no. 192102

被引：17

作者：

Irokawa, Y

Fujishima, O

Kachi, T

Pearton, SJ

Ren, F

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 19期

关键词：

D O I：

10.1063/1.1926422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiple-energy Si+ implantation in the range 30-360 keV into Al0.13Ga0.87N for n-type doping was carried out at room temperature, followed by annealing at 1150-1375 degrees C for 5 min. Activation efficiencies close to 100% were obtained for ion doses of 1.0 x 10(15) cm(-2) after annealing at 1375 degrees C, with a resulting sheet resistance of 74 Omega/square. By sharp contrast, the activation efficiency at 1150 degrees C was only 4% for this dose, with a sheet resistance of 1.63 x 10(4) Omega/square. The activation efficiency was also a function of dose, with a maximum activation percentage of only 55% for lower doses of 1.0 x 10(14) cm(-2) annealed at 1375 degrees C. This is due to the comparatively larger effect of compensating acceptors at the lower dose and is also lower than the corresponding activation of Si in pure GaN under these conditions (78%). The measurement temperature dependence of sheet carrier density showed an activation energy of 23 meV, consistent with the ionization energy of Si in AlGaN. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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