Ion-beam-induced dissociation and bubble formation in GaN

被引：69

作者：

Kucheyev, SO ^{[1
]}

Williams, JS

Zou, J

Jagadish, C

Li, G

机构：

[1] Australian Natl Univ, RSPhysSE, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Sydney, Electron Microscope Unit, Sydney, NSW 2006, Australia

[3] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[4] LED Expert Corp, Ta Fa Ind Dist, Kaohsiung Cty, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期

关键词：

D O I：

10.1063/1.1330221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural studies reveal that heavy ion bombardment of GaN causes amorphization and anomalous swelling of the implanted region as a result of the formation of a porous structure. Results strongly suggest that such a porous structure consists of N-2 gas bubbles embedded into a highly N-deficient amorphous GaN matrix. The evolution of the porous structure in amorphous GaN appears to be a result of stoichiometric imbalance where N- and Ga-rich regions are produced by ion bombardment. Prior to amorphization, ion bombardment does not produce a porous structure due to very efficient dynamic annealing processes in the crystalline phase. (C) 2000 American Institute of Physics. [S0003-6951(00)03349-0].

引用

页码：3577 / 3579

页数：3

共 14 条

[1] ANOMALOUS BEHAVIOR OF ION-IMPLANTED GASB [J].

CALLEC, R ;

FAVENNEC, PN ;

SALVI, M ;

LHARIDON, H ;

GAUNEAU, M .

APPLIED PHYSICS LETTERS, 1991, 59 (15) :1872-1874

[2] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[3]

Chu W., 1978, BACKSCATTERING SPECT, DOI DOI 10.1016/B978-0-12-173850-1.50008-9

[4] VERY EFFICIENT VOID FORMATION IN ION-IMPLANTED INSB [J].

DESTEFANIS, GL ;

GAILLIARD, JP .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :40-42

[5] In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN [J].

Jiang, W ;

Weber, WJ ;

Thevuthasan, S .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7671-7678

[6] Damage buildup in GaN under ion bombardment [J].

Kucheyev, SO ;

Williams, JS ;

Jagadish, C ;

Zou, J ;

Li, G .

PHYSICAL REVIEW B, 2000, 62 (11) :7510-7522

[7] Ion-beam-induced porosity of GaN [J].

Kucheyev, SO ;

Williams, JS ;

Jagadish, C ;

Zou, J ;

Craig, VSJ ;

Li, G .

APPLIED PHYSICS LETTERS, 2000, 77 (10) :1455-1457

[8] Strong surface disorder and loss of N produced by ion bombardment of GaN [J].

Kucheyev, SO ;

Williams, JS ;

Jagadish, C ;

Li, G ;

Pearton, SJ .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3899-3901

[9]

KUCHEYEV SO, 2000, MAT RES SOC S P, V622

[10]

KUCHEYEV SO, IN PRESS NUCL INST B

← 1 2 →