Strong surface disorder and loss of N produced by ion bombardment of GaN

被引:50
作者
Kucheyev, SO [1 ]
Williams, JS
Jagadish, C
Li, G
Pearton, SJ
机构
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Ledex Corp, Kaohsiung, Taiwan
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词
D O I
10.1063/1.126814
中图分类号
O59 [应用物理学];
学科分类号
摘要
The damage buildup in wurtzite GaN films under light (C-12) and heavy (Au-197) ion bombardment at temperatures from -196 to 550 degrees C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the expected damage peak in the region of the maximum of nuclear energy loss has been observed for all implant conditions of this study. Capping of GaN with SiOx and SixNy layers prior to implantation somewhat reduces but does not eliminate surface disordering. This suggests that nitrogen loss is not the main reason for the observed enhanced surface disorder, but, rather, the GaN surface acts as a strong sink for migrating point defects. However, pronounced loss of N during ion bombardment is observed for high dose implantation when the near-surface region is amorphized. Moreover, after amorphization, annealing at temperatures above about 400 degrees C leads to complete decomposition of the near-surface layer. (C) 2000 American Institute of Physics. [S0003-6951(00)02626-7].
引用
收藏
页码:3899 / 3901
页数:3
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