Ion-beam-induced porosity of GaN

被引：68

作者：

Kucheyev, SO ^{[1
]}

Williams, JS

Jagadish, C

Zou, J

Craig, VSJ

Li, G

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Sydney, Electron Microscope Unit, Sydney, NSW 2006, Australia

[3] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[4] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Math Appl, Canberra, ACT 0200, Australia

[5] Ledex Corp, Kaohsiung, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 10期

关键词：

D O I：

10.1063/1.1290722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wurtzite GaN films bombarded with heavy ions (Au-197(+)) show anomalous swelling of the implanted region with corresponding volume expansion up to similar to 50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation. (C) 2000 American Institute of Physics. [S0003-6951(00)03136-3].

引用

收藏

页码：1455 / 1457

页数：3

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