CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE

[1] APPLETON BR, UNPUB

[2] LASER-INDUCED REORDER IN PB IMPLANTED GE [J]. APPLIED PHYSICS, 1980, 22 (02): : 201 - 203

[3] CHERNOW F, 1976, ION IMPLANTATION SEM

[4] Crowder Billy L., 1973, ION IMPLANTATION SEM

[5] HOLLAND OW, UNPUB

[6] Johansson N. G. E., 1970, Radiation Effects, V6, P257, DOI 10.1080/00337577008236304

[7] Mayer J. W., 1970, ION IMPLANTATION SEM

[8] NARAYAN J, UNPUB

[9] NARAYAN J, 1981, DEFECTS SEMICONDUCTO

[10] RIMINI E, 1979, LASER SOLID INTERACT, P259

[1] APPLETON BR, UNPUB

[2] LASER-INDUCED REORDER IN PB IMPLANTED GE [J]. APPLIED PHYSICS, 1980, 22 (02): : 201 - 203

[3] CHERNOW F, 1976, ION IMPLANTATION SEM

[4] Crowder Billy L., 1973, ION IMPLANTATION SEM

[5] HOLLAND OW, UNPUB

[6] Johansson N. G. E., 1970, Radiation Effects, V6, P257, DOI 10.1080/00337577008236304

[7] Mayer J. W., 1970, ION IMPLANTATION SEM

[8] NARAYAN J, UNPUB

[9] NARAYAN J, 1981, DEFECTS SEMICONDUCTO

[10] RIMINI E, 1979, LASER SOLID INTERACT, P259