LASER-INDUCED REORDER IN PB IMPLANTED GE

[1] APPLETON BR, 1977, ION BEAM HDB MAT ANA, pCH3

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[3] BAERI P, 1979, NOV S LAS EL BEAM PR

[4] BRICE JC, 1965, GROWTH CRYSTALS MELT, P33

[5] LATTICE REORDERING IN PB IMPLANTED GE CRYSTALS [J]. APPLIED PHYSICS, 1977, 13 (01): : 101 - 103

[6] CHALMERS B, 1967, PRINCIPLES SOLIDIFIC, pCH5

[7] MECHANISMS OF IMPURITY REDISTRIBUTION ON LASER-ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 179 - 181

[8] THEORY OF NONEQUILIBRIUM DISTRIBUTION COEFFICIENTS DURING CRYSTALLIZATION [J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (10) : 4632 - &

[9] LEAMY HJ, 1979, J CRYST GROWTH, V15, P795

[10] LEAMY HJ, 1979, LASER SOLID INTERACT

[1] APPLETON BR, 1977, ION BEAM HDB MAT ANA, pCH3

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[3] BAERI P, 1979, NOV S LAS EL BEAM PR

[4] BRICE JC, 1965, GROWTH CRYSTALS MELT, P33

[5] LATTICE REORDERING IN PB IMPLANTED GE CRYSTALS [J]. APPLIED PHYSICS, 1977, 13 (01): : 101 - 103

[6] CHALMERS B, 1967, PRINCIPLES SOLIDIFIC, pCH5

[7] MECHANISMS OF IMPURITY REDISTRIBUTION ON LASER-ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 179 - 181

[8] THEORY OF NONEQUILIBRIUM DISTRIBUTION COEFFICIENTS DURING CRYSTALLIZATION [J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (10) : 4632 - &

[9] LEAMY HJ, 1979, J CRYST GROWTH, V15, P795

[10] LEAMY HJ, 1979, LASER SOLID INTERACT