LATTICE REORDERING IN PB IMPLANTED GE CRYSTALS

[1] INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 154 - 155

[2] RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 237 - 240

[3] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[4] CHU WK, 1975, ION IMPLANTATION SEM

[5] HANSEN HM, 1958, CONSTITUTION BINARY

[6] Study of the annealing behaviour of high dose implants in silicon and germanium crystals [J]. Radiation Effects, 1975, 24 (04): : 255 - 262

[7] Mayer J. W., 1970, ION IMPLANTATION SEM

[8] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[9] MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161

[10] SVENNINGSEN B, 1976, APPLICATIONS ION BEA, P142

[1] INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 154 - 155

[2] RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 237 - 240

[3] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[4] CHU WK, 1975, ION IMPLANTATION SEM

[5] HANSEN HM, 1958, CONSTITUTION BINARY

[6] Study of the annealing behaviour of high dose implants in silicon and germanium crystals [J]. Radiation Effects, 1975, 24 (04): : 255 - 262

[7] Mayer J. W., 1970, ION IMPLANTATION SEM

[8] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[9] MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161

[10] SVENNINGSEN B, 1976, APPLICATIONS ION BEA, P142