INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER

[1] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[2] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[3] EISEN FH, 1973, CHANNELING, pCH14

[4] TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07): : 2169 - +

[5] HANSEN H, 1958, CONSTITUTION BINARY, P1106

[6] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[7] Mayer J. W., 1971, Radiation Effects, V8, P269, DOI 10.1080/00337577108231040

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[10] [No title captured]

[1] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[2] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[3] EISEN FH, 1973, CHANNELING, pCH14

[4] TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07): : 2169 - +

[5] HANSEN H, 1958, CONSTITUTION BINARY, P1106

[6] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[7] Mayer J. W., 1971, Radiation Effects, V8, P269, DOI 10.1080/00337577108231040

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[10] [No title captured]