I-V characteristics of modified silicon surface using scanning probe microscopy

被引：22

作者：

Yasue, T

Koyama, H

Kato, T

Nishioka, T

机构：

[1] MITSUBISHI ELECTR CORP,ULSI R&D LAB,ITAMI,HYOGO 664,JAPAN

[2] RYODEN SEMICOND SYST ENGN CORP,ITAMI,HYOGO 664,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.589302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using scanning probe microscopy, we have modified a silicon surface and measured its current-voltage (I-V) characteristics. In the modified area, both an increase in film thickness and a decrease in current caused by field-induced oxidation (FIO) have been observed. The I-V characteristics of the FIO film shows a good fit to a Fowler-Nordheim (FN) tunneling current model. The barrier height determined by a FN plot shows a good agreement with that of conventional metal-oxide-semiconductor structure with thermal thick silicon oxide. (C) 1997 American Vacuum Society.

引用

收藏

页码：614 / 617

页数：4

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