ELECTRON-TUNNELING THROUGH CHEMICAL OXIDE OF SILICON

被引：9

作者：

SAITO, K ^{[1
]}

MATSUDA, M ^{[1
]}

YASUTAKE, M ^{[1
]}

HATTORI, T ^{[1
]}

机构：

[1] SEIKO INSTRUMENTS INC,DIV SCI INSTRUMENTS,OYA,SHIZUOKA 41013,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 5B期

关键词：

ELECTRON TUNNELING; SILICON OXIDE; CHEMICAL OXIDE; MOS DIODE; ATOMIC FORCE MICROSCOPE;

D O I：

10.1143/JJAP.34.L609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier transport between gold and nf-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.

引用

页码：L609 / L611

页数：3

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