DEGRADATION AND BREAKDOWN OF SILICON DIOXIDE FILMS ON SILICON

被引：81

作者：

DIMARIA, DJ

ARNOLD, D

CARTIER, E

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 19期

关键词：

D O I：

10.1063/1.108233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.

引用

页码：2329 / 2331

页数：3

共 15 条

[1] ACOUSTIC-PHONON RUNAWAY AND IMPACT IONIZATION BY HOT-ELECTRONS IN SILICON DIOXIDE
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[6] IMPACT IONIZATION AND POSITIVE CHARGE FORMATION IN SILICON DIOXIDE FILMS ON SILICON
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[J]. APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2118 - 2120
[7] TRAP CREATION IN SILICON DIOXIDE PRODUCED BY HOT-ELECTRONS
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[8] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
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PESAVENTO, FL
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BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1214 - 1238
[9] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE
FISCHETTI, MV
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[J]. PHYSICAL REVIEW B, 1985, 31 (12) : 8124 - 8142
[10] TEMPERATURE-DEPENDENCE OF ELECTRON TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES AS A FUNCTION OF THE INJECTION MODE
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2150 - 2152

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