DEGRADATION AND BREAKDOWN OF SILICON DIOXIDE FILMS ON SILICON

被引：81

作者：

DIMARIA, DJ

ARNOLD, D

CARTIER, E

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 19期

关键词：

D O I：

10.1063/1.108233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.

引用

页码：2329 / 2331

页数：3