DETECTION OF SI-H BONDS IN SILICON-OXIDE BY X-RAY PHOTOELECTRON-SPECTRUM DIFFERENCE

被引：56

作者：

OGAWA, H

HATTORI, T

机构：

[1] Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Setagaya-ku, Tokyo 158

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.107842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detection of Si-H bonds in silicon oxide from the measurement of x-ray photoelectron spectrum difference is confirmed by the measurement of infrared absorption spectrum difference in the case of silicon native oxides formed during wet chemical treatments of atomically flat hydrogen terminated Si (111) surfaces. The desorption of hydrogen from native oxide is also found from x-ray photoelectron spectrum difference.

引用

页码：577 / 579

页数：3

共 9 条

[1]

GROVE AS, 1967, PHYS TECHNOL S, P102

[2] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].