THE STUDY OF THE THERMAL OXIDE-FILMS ON SILICON-WAFERS BY FOURIER-TRANSFORM INFRARED ATTENUATED TOTAL REFLECTION SPECTROSCOPY

被引：36

作者：

NAGASAWA, Y ^{[1
]}

YOSHII, I ^{[1
]}

NARUKE, K ^{[1
]}

YAMAMOTO, K ^{[1
]}

ISHIDA, H ^{[1
]}

ISHITANI, A ^{[1
]}

机构：

[1] TOSHIBA CO LTD,SEMICOND DEVICE ENGN LAB,KAWASAKI 210,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fourier transform infrared attenuated total reflectance technique was used to measure the SiOH and SiH contents in the thermal oxide films grown on Si wafers. It was found that the SiOH groups in the bulk could be eliminated by annealing at 850 °C, whereas SiOH at the Si/SiO2 interface could only be removed by annealing at 1000 °C. It was also found that SiOH and SiH groups were generated in the thin oxide film by γ-ray irradiation. The presence of H or H2 in SiO2 is necessary to explain the result.

引用

页码：1429 / 1434

页数：6

共 24 条

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