SILICON-HYDROGEN BONDS IN SILICON NATIVE OXIDES FORMED DURING WET CHEMICAL TREATMENTS

被引：43

作者：

SUGIYAMA, K

IGARASHI, T

MORIKI, K

NAGASAWA, Y

AOYAMA, T

SUGINO, R

ITO, T

HATTORI, T

机构：

[1] TORAY RES CTR LTD, OTSU, SHIGA 520, JAPAN

[2] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

NATIVE OXIDES; SILICON HYDROGEN BOND; WET CHEMICAL TREATMENTS; INFRARED ABSORPTION; ANGLE-RESOLVED PHOTOEMISSION;

D O I：

10.1143/JJAP.29.L2401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon-hydrogen bonds in silicon oxide films were detected for the first time by applying surface-sensitive X-ray photoelectron spectroscopy and were confirmed by measuring infrared absorption. The areal density of silicon-hydrogen bonds in native oxides formed in a hot solution of HNO3 is estimated to be nearly 2 X 10(14) cm-2, and is much larger than that formed in a solution with a comparison of NH4OH: H2O2:H2O = 1:1.4:4.

引用

页码：L2401 / L2404

页数：4

共 8 条

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