ATTENUATED TOTAL REFLECTANCE STUDY OF SILICON-RICH SILICON DIOXIDE FILMS

被引：19

作者：

HARTSTEIN, A

DIMARIA, DJ

DONG, DW

KUCZA, JA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.328130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3860 / 3862

页数：3

相关论文

共 15 条

[1] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].

BECKMANN, KH ;

HARRICK, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&

[2]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[4] GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS) [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5826-5829

[5] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[6]

DONG D, 1978, ELECTROCHEM SOC, V125, P819

[7] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992

[8] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS [J].

HARTSTEIN, A ;

TSANG, JC ;

DIMARIA, DJ ;

DONG, DW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :836-837

[9] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1613-1616

[10] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J].

LUCOVSKY, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (08) :571-576