CHEMICAL-BONDS AT AND NEAR THE SIO2/SI INTERFACE

[1] AKAKURA M, 1988, JPN J APPL PHYS, V27, pL2213

[2] CHEMICAL-STRUCTURE OF ULTRATHIN THERMALLY GROWN OXIDES ON A SI(100)-WAFER USING CORE LEVEL PHOTOEMISSION [J]. SURFACE SCIENCE, 1987, 180 (01) : 279 - 288

[3] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

[4] THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 629 - 638

[5] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 470 - 472

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096

[7] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95

[8] ELECTRON-SPECTROSCOPY STUDY OF THE SI-O BONDING AND THE POLARIZATION SCREENING NEAR THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1064 - 1066

[9] CHARACTERIZATION OF SILICON-COMPOUNDS USING THE AUGER PARAMETER IN X-RAY PHOTOELECTRON-SPECTROSCOPY (XPS) [J]. APPLIED SURFACE SCIENCE, 1987, 28 (02) : 103 - 110

[10] CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS-SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 741 - 744

[1] AKAKURA M, 1988, JPN J APPL PHYS, V27, pL2213

[2] CHEMICAL-STRUCTURE OF ULTRATHIN THERMALLY GROWN OXIDES ON A SI(100)-WAFER USING CORE LEVEL PHOTOEMISSION [J]. SURFACE SCIENCE, 1987, 180 (01) : 279 - 288

[3] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

[4] THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 629 - 638

[5] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 470 - 472

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096

[7] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95

[8] ELECTRON-SPECTROSCOPY STUDY OF THE SI-O BONDING AND THE POLARIZATION SCREENING NEAR THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1064 - 1066

[9] CHARACTERIZATION OF SILICON-COMPOUNDS USING THE AUGER PARAMETER IN X-RAY PHOTOELECTRON-SPECTROSCOPY (XPS) [J]. APPLIED SURFACE SCIENCE, 1987, 28 (02) : 103 - 110

[10] CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS-SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 741 - 744