Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation

被引：20

作者：

Dogan, P. ^{[1
]}

Rudigier, E. ^{[1
]}

Fenske, F. ^{[1
]}

Lee, K. Y. ^{[1
]}

Gorka, B. ^{[1
]}

Rau, B. ^{[1
]}

Conrad, E. ^{[1
]}

Gall, S. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

关键词：

crystalline silicon; secco etching; extended defects; low temperature epitaxy;

D O I：

10.1016/j.tsf.2007.12.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

in this work, we present structural and electrical properties of thin Si films which are homoepitaxially grown at low substrate temperatures (T-s=450-700 degrees C) by high-rate electron beam evaporation. As substrates, monocrystalline Si wafers with (100) and (111) orientations and polycrystalline Si (poly-Si) seed layers on glass were used. Applying Secco etching, films grown on Si(I 11) wafers exhibit a decreasing etch pit density with increasing T,,. The best structural quality of the films was obtained on Si(100) wafers. Defect etching on epitaxially grown poly-Si absorbers reveal regions with different crystalline quality. Solar cells have been prepared on both wafers and seed layers. Applying Rapid Thermal Annealing (RTA) and Hydrogen plasma passivation an open circuit voltage of 570 mV for wafer based and 346 mV for seed layer based solar cells have been reached. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：6989 / 6993

页数：5