Percolative metal-insulator transition in La0.9Sr0.1MnO3 ultrathin films by resistive relaxation -: art. no. 132407

被引：18

作者：

Chen, XJ ^{[1
]}

Habermeier, HU

Almasan, CC

机构：

[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.68.132407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an experimental study of the time dependence of resistivity of a La0.9Sr0.1MnO3 ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance (CMR) effect. There is a clear change of sign in the resistive relaxation rate across the metal-insulator transition driven by temperature or magnetic field. When measuring in increasing temperature or decreasing magnetic field, the resistivity increases with time in the metallic state but decreases with time in the insulating state. These relaxation processes indicate that the metal-insulator transition and the associated CMR are a direct result of phase separation and of percolation of the metallic phase.

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页数：4

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