Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors

被引:1736
作者
Wang, Xinran [1 ,2 ]
Ouyang, Yijian [3 ]
Li, Xiaolin [1 ,2 ]
Wang, Hailiang [1 ,2 ]
Guo, Jing [3 ]
Dai, Hongjie [1 ,2 ]
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA
[3] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
关键词
D O I
10.1103/PhysRevLett.100.206803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I-on/I-off ratio up to 10(6) and on-state current density as high as similar to 2000 mu A/mu m. We estimated carrier mobility similar to 200 cm(2)/V s and scattering mean free path similar to 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d <=similar to 1.2 nm) carbon nanotube FETs with Pd contacts in on-state current density and I-on/I-off ratio, but have the advantage of producing all-semiconducting devices.
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页数:4
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共 24 条
[21]   Energy gaps in graphene nanoribbons [J].
Son, Young-Woo ;
Cohen, Marvin L. ;
Louie, Steven G. .
PHYSICAL REVIEW LETTERS, 2006, 97 (21)
[22]   Electronic transport properties of nanographite ribbon junctions [J].
Wakabayashi, K .
PHYSICAL REVIEW B, 2001, 64 (12)
[23]   Quasiparticle energies and band gaps in graphene nanoribbons [J].
Yang, Li ;
Park, Cheol-Hwan ;
Son, Young-Woo ;
Cohen, Marvin L. ;
Louie, Steven G. .
PHYSICAL REVIEW LETTERS, 2007, 99 (18)
[24]   Experimental observation of the quantum Hall effect and Berry's phase in graphene [J].
Zhang, YB ;
Tan, YW ;
Stormer, HL ;
Kim, P .
NATURE, 2005, 438 (7065) :201-204