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Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
被引:1736
作者:
Wang, Xinran
[1
,2
]
Ouyang, Yijian
[3
]
Li, Xiaolin
[1
,2
]
Wang, Hailiang
[1
,2
]
Guo, Jing
[3
]
Dai, Hongjie
[1
,2
]
机构:
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA
[3] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
关键词:
D O I:
10.1103/PhysRevLett.100.206803
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I-on/I-off ratio up to 10(6) and on-state current density as high as similar to 2000 mu A/mu m. We estimated carrier mobility similar to 200 cm(2)/V s and scattering mean free path similar to 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d <=similar to 1.2 nm) carbon nanotube FETs with Pd contacts in on-state current density and I-on/I-off ratio, but have the advantage of producing all-semiconducting devices.
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