Application of focused ion beam milling to cross-sectional TEM specimen preparation of industrial materials including heterointerfaces

被引:18
作者
Kuroda, K [1 ]
Takahashi, M
Kato, T
Saka, H
Tsuji, S
机构
[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4648603, Japan
[3] IBM Japan Ltd, Yamato Lab, Kanagawa 242, Japan
关键词
focused ion beam (FIB); transmission electron microscope (TEM); thin-film transistor (TFT); galvanized steel; diamond film;
D O I
10.1016/S0040-6090(97)01093-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Specimen preparation is always a crucial question of transmission electron microscope (TEM) investigation Recently new specimen preparation technique using focused ion beam (FIB) milling was developed. We applied this technique to the fabrication of cross-sectional TEM specimens of industrial materials including heterointerfaces. The following investigations were carried out: multilayered structures in thin-film transistors for the liquid crystal display, interfaces in a hot dip galvanized steel and microstructures of a diamond Nm on silicon nitride. The largest benefit of FIB lies in its application to heterointerface analysis at a particular position in submicron scale. This technique extends the use of TEM analysis into new areas of. characterization of ind;strial materials. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:92 / 96
页数:5
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