APPLICATION OF THE FOCUSED-ION-BEAM TECHNIQUE FOR PREPARING THE CROSS-SECTIONAL SAMPLE OF CHEMICAL VAPOR-DEPOSITION DIAMOND THIN-FILM FOR HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION

被引:41
作者
TARUTANI, M
TAKAI, Y
SHIMIZU, R
机构
[1] Department of Applied Physics, Osaka University, Suita-shi Osaka, 565
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期
关键词
FOCUSED ION BEAM; CVD DIAMOND; CROSS-SECTIONAL SAMPLE; HRTEM; INTERFACE STRUCTURE; BETA-SIC;
D O I
10.1143/JJAP.31.L1305
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic-scale observation of chemical vapor deposition (CVD)-diamond/silicon interface structures was successfully performed by applying a focused-ion-beam (FIB) technique for preparing the cross-sectional samples. Several severe conditions such as weak adhesion and extreme difference in sputtering yield have virtually prevented the proper processing of the interface cross sections by only the conventional method. A sample preparation procedure is proposed with some specific devices for extreme thinning, sufficient for high-resolution transmission electron microscope (HRTEM) observation, emphasizing the good potential for wider practical use.
引用
收藏
页码:L1305 / L1308
页数:4
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