MICROMACHINING AND DEVICE TRANSPLANTATION USING FOCUSED ION-BEAM

被引:40
作者
ISHITANI, T
OHNISHI, T
KAWANAMI, Y
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期
关键词
Assisted-deposition; Deposition; Device transplantation; FIB; Focused ion beam (FIB); Micromachining; Sputtering;
D O I
10.1143/JJAP.29.2283
中图分类号
O59 [应用物理学];
学科分类号
摘要
During the past ten years, a number of focused ion beam (FIB) applications in microelectronics have been demonstrated and steadily identified. In this paper, we will review FIB micromachining and device transplantation, in which processes of FIB sputtering, redeposition, and/or FIB-assisted deposition are well utilized. The FIB 3-dimensional micromachining is demonstrated with the aid of a sample rotator. Good prospects in the device transplantation are identified as a new high-resolution method for microdevice assembly and device repair. These FIB applications can be visually performed using scanning ion microscope (SIM) images. Specifications of the FIB apparatus for these applications and FIB micromachining simulation are also discussed. © 1990 IOP Publishing Ltd.
引用
收藏
页码:2283 / 2287
页数:5
相关论文
共 13 条