SILICON-OXIDE FILM FORMATION BY FOCUSED ION-BEAM (FIB)-ASSISTED DEPOSITION

被引:21
作者
KOMANO, H
OGAWA, Y
TAKIGAWA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 11期
关键词
D O I
10.1143/JJAP.28.2372
中图分类号
O59 [应用物理学];
学科分类号
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页码:2372 / 2375
页数:4
相关论文
共 10 条
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