Monitoring and modeling silicon homoepitaxy breakdown with real-time spectroscopic ellipsometry

被引：32

作者：

Teplin, CW ^{[1
]}

Levi, DH ^{[1
]}

Iwaniczko, E ^{[1
]}

Jones, KM ^{[1
]}

Perkins, JD ^{[1
]}

Branz, HM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期

关键词：

D O I：

10.1063/1.1903110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Real-time spectroscopic ellipsometry (RTSE) is used to monitor the breakdown of low-temperature homoepitaxial growth of silicon on silicon wafers in a hot-wire chemical-vapor deposition reactor. We develop and evaluate two optical models to interpret the RTSE data, revealing the progression of epitaxy and its eventual breakdown into amorphous silicon growth. Comparison of the RTSE analysis with cross-sectional transmission electron microscopy, ex situ variable-angle spectroscopic ellipsometry, and Raman spectroscopy measurements shows that RTSE provides accurate and fast quantitative feedback about the progression of epitaxy. (c) 2005 American Institute of Physics.

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页数：7

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