I-V relations in a p-type semiconductor having mobile acceptors

被引：15

作者：

Riess, I ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

来源：

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 2005年 / 219卷 / 01期

关键词：

mixed ionic electronic conductor; MIEC; semiconductor with mobile; acceptors; current voltage relations; ion blocking electrodes;

D O I：

10.1524/zpch.219.1.1.55021

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current-voltage relations for a p-type or it-type semiconductor with inert metal electrode, in which the acceptors or donors are mobile. are evaluated. The relations found are, as expected, different from those in a doped semiconductor in which the acceptors or donors are immobile. This is not ail academic question only It refers to mixed ionic electronic conductors with ion blocking electrodes and it seems that the I-V relations measured for Cu2O can be interpreted in this way.

引用

页码：1 / 22

页数：22

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