Preparation of oxide thin films by controlled diffusion of oxygen atoms

被引:19
作者
Rosenstock, Z [1 ]
Riess, I [1 ]
机构
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
基金
以色列科学基金会;
关键词
oxide thin films; controlled diffusion; oxygen permeability; Cu2O;
D O I
10.1016/S0167-2738(00)00570-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new method for preparing thin oxide films is described. It makes use of slow diffusion of oxygen through a permeable layer, towards the metal to be oxidized. We have used this method to oxidize copper. The permeable layer is a dense silver film. The formation of the oxide was followed in situ in an attempt to measure the resistance of the cell. (C) 2000 Elsevier Science B.V. All lights reserved.
引用
收藏
页码:921 / 926
页数:6
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