Thermoelectric Properties of Defect Chalcopyrites

被引：4

作者：

Pandey, Chhama ^{[1
]}

Sharma, Ramesh ^{[1
]}

Sharma, Yamini ^{[2
]}

机构：

[1] Mewar Univ, Dept Phys, Chittaurgarh 312901, Rajasthan, India

[2] Feroze Gandhi Postgrad Coll, TCMPL, Dept Phys, Raebareli 229001, UP, India

来源：

61ST DAE-SOLID STATE PHYSICS SYMPOSIUM | 2017年 / 1832卷

关键词：

Electronic structure; Optical properties; thermoelectric properties; Figure of merit; OPTICAL-PROPERTIES; BAND-STRUCTURE; PHOTOCURRENT; ENERGY; GAP;

D O I：

10.1063/1.4980633

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structure and transport properties of the XIn2Te4 (X=Zn, Cd) compounds using the full potential linearized augmented plane-wave (FP-LAPW) method and the semi-classical Boltzmann theory are presented in this paper. The ternary chalcogenides ZnIn2Te4 and CdIn2Te4 are direct band gap semiconductors with a band gap of 1.08 and 1.03 eV respectively. Although the optical properties are very similar, the transport properties of these chalcopyrites differ. From the calculated Hall coefficient, it is found that the tellurides are p-type materials with electron concentration of 8.09x10(19) and 4.80x10(19) cm(-3) respectively. The figure of merit shows variation with temperature in CdIn2Te4, whereas it is nearly constant over the entire temperature range (10-800 K) in ZnIn2Te4.

引用

页数：3

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