Evaluation of carbon surface diffusion on silicon by using surface phase transitions

被引：7

作者：

Scharmann, F ^{[1
]}

Maslarski, P ^{[1
]}

Lehmkuhl, D ^{[1
]}

Stauden, T ^{[1
]}

Pezoldt, J ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Inst Festkorperelektron, D-98684 Ilmenau, Germany

来源：

FOURTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2001年 / 4348卷

关键词：

D O I：

10.1117/12.417645

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The first stage of the interaction of carbon with the silicon surface is the formation of the carbon induced Si(100)c(4x4) and the Si(111) (root($) over bar 3x root($) over bar3)R30 degrees reconstruction. This stage of the carbon silicon interaction was used to determine the surface diffusion coefficient of carbon on reconstructed (100) and (111) silicon surfaces with in situ reflection high energy electron diffraction. The parameters were determined by using a phenomenological model describing the time dependence of the surface phase transition.

引用

页码：173 / 177

页数：5