Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35V drain voltage

被引：42

作者：

Asano, K ^{[1
]}

Miyoshi, Y ^{[1
]}

Ishikura, K ^{[1
]}

Nashimoto, Y ^{[1
]}

Kuzuhara, M ^{[1
]}

Mizuta, M ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Otsu, Shiga 5200833, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a novel high AlGaAs/GaAs heterostructure FET with a field-modulating modulating plate (FP-HFET), which accomplished dramatic increase of the gate-drain breakdown voltage with greatly suppressed drain-current pulse-dispersion characteristics. The fabricated FETs exhibited excellent power performance up to 35V at L-band, delivering the maximum power density of 1.7W/mm.

引用

页码：59 / 62

页数：4

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