Photocurrent spectroscopy under depletion mode of transparent polymer field-effect transistors

被引：16

作者：

Dutta, S ^{[1
]}

Narayan, KS ^{[1
]}

机构：

[1] Indian Inst Sci, Jawaharlal Nehru Ctr Adv Sci Res, Mol Elect Lab, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期

关键词：

D O I：

10.1063/1.2126151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The unique combination of voltage and light as the controlling parameters for charge transport in polymer-based field-effect transistors (PFETs) offers interesting strategies for light detection. Results of gate-voltage (V-g)-controlled intensity-modulated spectral response of the drain current in optically transparent PFETs are reported. The measurement and analysis of the results, obtained from light incident from the top and bottom side of the device, provide spatial information of the V-g-dependent photocarrier generation region. These measurements serve as a direct measure of the extent of the depletion. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 16 条

[1] Optical spectroscopy of field-induced charge in self-organized high mobility poly(3-hexylthiophene) [J].