Extrinsically dissociated dislocations in simulated aluminium

被引：10

作者：

Hirth, JP ^{[1
]}

Hoagland, RG ^{[1
]}

机构：

[1] Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1998年 / 78卷 / 03期

关键词：

D O I：

10.1080/01418619808241920

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dissociation of dislocations into partials bounding an extrinsic stacking fault is studied in an atomistic simulation of aluminium. An embedded-atom-type potential is employed. Of two possible extended configurations, one retains an extrinsic stacking fault in a stable array while the other converts to an array with an intrinsic stacking fault. The results are related to interaction forces among the partial dislocations in the arrays.

引用

页码：529 / 532

页数：4

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