DISLOCATION-STRUCTURES IN IN-DOPED AND UNDOPED GAAS DEFORMED AT 700-1100-DEGREES-C

被引：17

作者：

RAI, RS

GURUSWAMY, S

FABER, KT

HIRTH, JP

机构：

[1] OHIO STATE UNIV,DEPT CERAM ENGN,COLUMBUS,OH 43210

[2] OHIO STATE UNIV,DEPT MET ENGN,COLUMBUS,OH 43210

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1989年 / 60卷 / 03期

关键词：

D O I：

10.1080/01418618908213866

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：339 / 353

页数：15

共 26 条

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[8] DEFORMATION-BEHAVIOR OF UNDOPED AND IN-DOPED GAAS IN THE TEMPERATURE-RANGE 700-100-DEGREES-C
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[9] ON DISLOCATION INTERACTIONS IN FCC LATTICE
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 700 - &
[10] Hirth JP., 1982, THEORY DISLOCATIONS