DEFORMATION-BEHAVIOR OF UNDOPED AND IN-DOPED GAAS IN THE TEMPERATURE-RANGE 700-100-DEGREES-C

被引：25

作者：

GURUSWAMY, S ^{[1
]}

RAI, RS ^{[1
]}

FABER, KT ^{[1
]}

HIRTH, JP ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT MET ENGN,COLUMBUS,OH 43210

来源：

关键词：

D O I：

10.1063/1.339129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4130 / 4134

页数：5

共 27 条

[1] SCREW DISLOCATION NETWORKS GENERATED IN GE AND SI BY STAGE-IV COMPRESSION
BRION, HG
HAASEN, P
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 51 (06): : 879 - 891
[2] THE GROWTH OF DISLOCATION-FREE GE-DOPED INP
BROWN, GT
COCKAYNE, B
MACEWAN, WR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 369 - 372
[3] COHOON JR, 1971, METALL T, V2, P1979
[4] HIGH-TEMPERATURE MECHANICAL-PROPERTIES OF GAAS SINGLE-CRYSTALS - EFFECT OF INDIUM DOPING AND OF ENVIRONMENT
DJEMEL, A
CASTAING, J
[J]. EUROPHYSICS LETTERS, 1986, 2 (08): : 611 - 615
[5] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION
EHRENREICH, H
HIRTH, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 668 - 670
[6] HIGH-TEMPERATURE HARDNESS OF GA1-XINXAS
GURUSWAMY, S
HIRTH, JP
FABER, KT
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4136 - 4140
[7] GURUSWAMY S, UNPUB
[8] HAASEN P, 1982, DISLOCATIONS SOLIDS, V4, P147
[9] TEMPERATURE-DEPENDENCE FOR THE ONSET OF PLASTIC YIELD IN UNDOPED AND INDIUM-DOPED GAAS
HOBGOOD, HM
MCGUIGAN, S
SPITZNAGEL, JA
THOMAS, RN
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1654 - 1655
[10] Jimenex-Melendo M., 1986, Materials Science Forum, V10-12, P791, DOI 10.4028/www.scientific.net/MSF.10-12.791