TEMPERATURE-DEPENDENCE FOR THE ONSET OF PLASTIC YIELD IN UNDOPED AND INDIUM-DOPED GAAS

被引：19

作者：

HOBGOOD, HM

MCGUIGAN, S

SPITZNAGEL, JA

THOMAS, RN

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 24期

关键词：

D O I：

10.1063/1.96844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1654 / 1655

页数：2

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[6] AN ANALYSIS OF DISLOCATION REDUCTION BY IMPURITY HARDENING IN THE LIQUID-ENCAPSULATED CZOCHRALSKI GROWTH OF (111) INP
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[7] EFFECTS OF INDIUM LATTICE HARDENING UPON THE GROWTH AND STRUCTURAL-PROPERTIES OF LARGE-DIAMETER, SEMIINSULATING GAAS CRYSTALS
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[8] TEMPERATURE AND ORIENTATION DEPENDENCE OF PLASTIC-DEFORMATION IN GAAS SINGLE-CRYSTALS DOPED WITH SI, CR, OR ZN
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[9] [No title captured]