DEFORMATION-BEHAVIOR OF UNDOPED AND IN-DOPED GAAS IN THE TEMPERATURE-RANGE 700-100-DEGREES-C

被引：25

作者：

GURUSWAMY, S ^{[1
]}

RAI, RS ^{[1
]}

FABER, KT ^{[1
]}

HIRTH, JP ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT MET ENGN,COLUMBUS,OH 43210

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4130 / 4134

页数：5

相关论文

共 27 条

[21] SIETHOFF H, 1984, Z METALLKD, V75, P475
[22] TEMPERATURE AND ORIENTATION DEPENDENCE OF PLASTIC-DEFORMATION IN GAAS SINGLE-CRYSTALS DOPED WITH SI, CR, OR ZN
SWAMINATHAN, V
COPLEY, SM
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (11-1) : 482 - 485
[23] MEASUREMENTS OF THE CRITICAL RESOLVED SHEAR-STRESS FOR INDIUM-DOPED AND UNDOPED GAAS SINGLE-CRYSTALS
TABACHE, MG
BOURRET, ED
ELLIOT, AG
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 289 - 291
[24] INSITU OBSERVATION OF STRESS-INDUCED GENERATION AND MOTION DISLOCATIONS IN INP CRYSTALS
TOHNO, S
SHINOYAMA, S
KATSUI, A
TAKAOKA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 190 - 192
[25] TOHNO S, 1986, APPL PHYS LETT, V49, P1206
[26] DYNAMIC CHARACTERISTICS OF DISLOCATIONS IN INDIUM-DOPED GALLIUM-ARSENIDE CRYSTAL
YONENAGA, I
SUMINO, K
YAMADA, K
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 326 - 328
[27] Yonenaga I., 1987, Journal of Materials Research, V2, P252, DOI 10.1557/JMR.1987.0252