X-ray photoelectron diffraction study of Si(001)c(4x4)-C surface

被引：35

作者：

Kosugi, R

Sumitani, S

Abukawa, T

Takakuwa, Y

Suzuki, S

Sato, S

Kono, S

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Fac Sci, Dept Phys, Aoba Ku, Sendai, Miyagi 9808578, Japan

来源：

SURFACE SCIENCE | 1998年 / 412-13卷

基金：

日本学术振兴会;

关键词：

X-ray photoelectron diffraction; LEED; Si(001); ethylene; carbonization; diffusion; carbide;

D O I：

10.1016/S0039-6028(98)00377-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Si(001)c(4 x 4)-C surface, which was prepared by exposing a single-domain Si(001)2 x 1 surface to ethylene at a pressure of about 1 x 10(-6) mbar at 680 degrees C for 600 s, was investigated by X-ray photoelectron diffraction (XPD). The azimuthal-scan XPD patterns of C 1s showed pronounced peaks due to the forward-focusing effect in XPD, indicating that the adsorbed carbon diffuses into the substitutional sites of at least the 4th layer below the surface. The anisotropies of the measured XPD patterns are analyzed by single-scattering-cluster (SSC) simulations to find that the highly concentrated Si1-xCx alloy layers are present. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 131

页数：7

共 28 条

[1] STRUCTURAL MODEL FOR THE NEGATIVE ELECTRON-AFFINITY SURFACE OF O/CS/SI(001)2X1 [J].